SI8409DB-T1-E1
vs
SSM3J334R
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Not Recommended
|
Active
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
TOSHIBA CORP
|
| Part Package Code |
CSP
|
|
| Package Description |
GRID ARRAY, S-PBGA-B4
|
2-3Z1A, 3 PIN
|
| Pin Count |
4
|
3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Vishay
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
4.6 A
|
4 A
|
| Drain-source On Resistance-Max |
0.065 Ω
|
0.071 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
S-PBGA-B4
|
R-PDSO-F3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
GRID ARRAY
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
2.77 W
|
1 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
BALL
|
FLAT
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
10
|
| Rohs Code |
|
Yes
|
| Factory Lead Time |
|
12 Weeks
|
| Feedback Cap-Max (Crss) |
|
40 pF
|
| Pulsed Drain Current-Max (IDM) |
|
16 A
|
|
|
|
Compare SI8409DB-T1-E1 with alternatives
Compare SSM3J334R with alternatives