SIA447DJ-T1-GE3
vs
SSM6J505NU,LF(T
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
VISHAY SILICONIX
|
TOSHIBA CORP
|
Package Description |
SMALL OUTLINE, S-PDSO-N3
|
SMALL OUTLINE, S-PDSO-N6
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Samacsys Manufacturer |
Vishay
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
12 V
|
12 V
|
Drain Current-Max (ID) |
12 A
|
12 A
|
Drain-source On Resistance-Max |
0.0135 Ω
|
0.016 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
585 pF
|
|
JESD-30 Code |
S-PDSO-N3
|
S-PDSO-N6
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
6
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
SQUARE
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation Ambient-Max |
3.5 W
|
|
Power Dissipation-Max (Abs) |
19 W
|
|
Pulsed Drain Current-Max (IDM) |
50 A
|
30 A
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn) - annealed
|
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
170 ns
|
|
Turn-on Time-Max (ton) |
120 ns
|
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
Yes
|
|
|
|
Compare SIA447DJ-T1-GE3 with alternatives
Compare SSM6J505NU,LF(T with alternatives