SIHF640S-GE3 vs FQB19N20TM feature comparison

SIHF640S-GE3 Vishay Intertechnologies

Buy Now Datasheet

FQB19N20TM onsemi

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC ONSEMI
Package Description HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 D2PAK-3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 13 Weeks 4 Weeks
Samacsys Manufacturer Vishay onsemi
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 580 mJ 250 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 18 A 19.4 A
Drain-source On Resistance-Max 0.18 Ω 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 130 W 140 W
Pulsed Drain Current-Max (IDM) 72 A 78 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 40 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Manufacturer Package Code 418AJ
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish Matte Tin (Sn) - annealed

Compare SIHF640S-GE3 with alternatives

Compare FQB19N20TM with alternatives