SIHG22N60EL-GE3
vs
SIHG21N65EF-GE3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
VISHAY INTERTECHNOLOGY INC
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
22 Weeks
|
22 Weeks
|
| Avalanche Energy Rating (Eas) |
286 mJ
|
367 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
600 V
|
650 V
|
| Drain Current-Max (ID) |
21 A
|
21 A
|
| Drain-source On Resistance-Max |
0.197 Ω
|
0.18 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-247AC
|
TO-247AC
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
45 A
|
53 A
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Samacsys Manufacturer |
|
Vishay
|
|
|
|
Compare SIHG22N60EL-GE3 with alternatives
Compare SIHG21N65EF-GE3 with alternatives