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Transistors / Power Field-Effect Transistors / SIHG21N65EF-GE3
Datasheets
SIHG21N65EF-GE3 by:

Power Field-Effect Transistor, 21A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Part Details for SIHG21N65EF-GE3 by Vishay Intertechnologies

Overview of SIHG21N65EF-GE3 by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SIHG21N65EF-GE3

Part # Distributor Description Stock Price Buy
DISTI # 26AK5794
Newark Mosfet, N-Ch, 650V, 21A, To-247Ac Rohs Compliant: Yes |Vishay SIHG21N65EF-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 300
  • 1 $5.9100
  • 10 $5.0400
  • 25 $4.7800
  • 50 $4.4800
  • 100 $4.1700
  • 500 $3.6200
$3.6200 / $5.9100 Buy Now
DISTI # SIHG21N65EF-GE3
Avnet Americas N-CHANNEL 650V - Tape and Reel (Alt: SIHG21N65EF-GE3) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days Container: Reel 0
  • 500 $3.3100
  • 1,000 $3.2038
  • 2,000 $3.0976
  • 3,000 $2.9722
  • 4,000 $2.8757
  • 5,000 $2.7406
  • 50,000 $2.6055
$2.6055 / $3.3100 Buy Now
DISTI # 78-SIHG21N65EF-GE3
Mouser Electronics MOSFET 650V Vds 30V Vgs TO-247AC RoHS: Compliant 468
  • 1 $5.1700
  • 10 $4.3400
  • 25 $4.0900
  • 100 $3.5000
  • 250 $3.3100
  • 500 $2.9600
  • 1,000 $2.7500
  • 2,500 $2.5100
$2.5100 / $5.1700 Buy Now
Future Electronics AVAILABLE Q4/2015 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Box 0
Box
  • 500 $2.6600
  • 1,000 $2.6200
  • 1,500 $2.5700
$2.5700 / $2.6600 Buy Now
Future Electronics AVAILABLE Q4/2015 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Box 0
Box
  • 500 $2.6600
  • 1,000 $2.6200
  • 1,500 $2.5700
$2.5700 / $2.6600 Buy Now
DISTI # SIHG21N65EF-GE3
TTI MOSFET 650V Vds 30V Vgs TO-247AC RoHS: Compliant pbFree: Pb-Free Min Qty: 500 Package Multiple: 25 Container: Tube Americas - 0
  • 500 $2.7600
  • 1,000 $2.7000
  • 2,000 $2.6500
$2.6500 / $2.7600 Buy Now

Part Details for SIHG21N65EF-GE3

SIHG21N65EF-GE3 CAD Models

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SIHG21N65EF-GE3 Part Data Attributes:

Parametric Data
SIHG21N65EF-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHG21N65EF-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 21A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 22 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 367 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 53 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHG21N65EF-GE3

This table gives cross-reference parts and alternative options found for SIHG21N65EF-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHG21N65EF-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHP21N65EF-GE3 Power Field-Effect Transistor, 21A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SIHG21N65EF-GE3 vs SIHP21N65EF-GE3
SIHP22N60EL-GE3 Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SIHG21N65EF-GE3 vs SIHP22N60EL-GE3
SPP20N60C3HKSA1 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SIHG21N65EF-GE3 vs SPP20N60C3HKSA1
SIHP22N65E-GE3 Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SIHG21N65EF-GE3 vs SIHP22N65E-GE3
SIHP21N60EF-GE3 Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SIHG21N65EF-GE3 vs SIHP21N60EF-GE3
SIHG22N60EL-GE3 Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SIHG21N65EF-GE3 vs SIHG22N60EL-GE3
SIHB22N60EL-GE3 Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2 Vishay Intertechnologies SIHG21N65EF-GE3 vs SIHB22N60EL-GE3
SIHB22N65E-GE3 Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 Vishay Intertechnologies SIHG21N65EF-GE3 vs SIHB22N65E-GE3
IPW60R190C6XK Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG SIHG21N65EF-GE3 vs IPW60R190C6XK
STW28N65M2 N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package STMicroelectronics SIHG21N65EF-GE3 vs STW28N65M2

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