SIHG32N50D-GE3
vs
APT5020SLC
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
End Of Life
|
Obsolete
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
ADVANCED POWER TECHNOLOGY INC
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
|
Avalanche Energy Rating (Eas) |
225 mJ
|
1300 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
30 A
|
26 A
|
Drain-source On Resistance-Max |
0.15 Ω
|
0.2 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-247AC
|
|
JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
89 A
|
104 A
|
Surface Mount |
NO
|
YES
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Package Description |
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count |
|
3
|
Additional Feature |
|
AVALANCHE RATED
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare SIHG32N50D-GE3 with alternatives
Compare APT5020SLC with alternatives