Part Details for SIHG32N50D-GE3 by Vishay Intertechnologies
Overview of SIHG32N50D-GE3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHG32N50D-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63W4112
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Newark | Mosfet Transistor, N Channel, 30 A, 500 V, 0.125 Ohm, 10 V, 3 V Rohs Compliant: Yes |Vishay SIHG32N50D-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1248 |
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$3.5700 / $5.6000 | Buy Now |
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DISTI #
SIHG32N50D-GE3
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Avnet Americas | N-CHANNEL 500V - Tape and Reel (Alt: SIHG32N50D-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Container: Reel | 0 |
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$2.3223 | Buy Now |
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DISTI #
SIHG32N50D-GE3
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TME | Transistor: N-MOSFET, unipolar, 500V, 19A, Idm: 89A, 390W, TO247AC Min Qty: 1 | 0 |
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$3.8600 / $4.9700 | RFQ |
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DISTI #
SIHG32N50D-GE3
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EBV Elektronik | Trans MOSFET N-CH 500V 30A 3-Pin TO-247AC (Alt: SIHG32N50D-GE3) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHG32N50D-GE3
SIHG32N50D-GE3 CAD Models
SIHG32N50D-GE3 Part Data Attributes
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SIHG32N50D-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHG32N50D-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 30A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 225 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 89 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHG32N50D-GE3
This table gives cross-reference parts and alternative options found for SIHG32N50D-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHG32N50D-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHG32N50D-E3 | Power Field-Effect Transistor, 30A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | Vishay Intertechnologies | SIHG32N50D-GE3 vs SIHG32N50D-E3 |
| SIHG32N50D-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHG32N50D-GE3 vs SIHG32N50D-GE3 |