SIHG44N65EF-GE3 vs R6047ENZ1C9 feature comparison

SIHG44N65EF-GE3 Vishay Intertechnologies

Buy Now Datasheet

R6047ENZ1C9 ROHM Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC ROHM CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 18 Weeks
Date Of Intro 2016-05-10
Samacsys Manufacturer Vishay ROHM Semiconductor
Avalanche Energy Rating (Eas) 596 mJ 1135 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V 600 V
Drain Current-Max (ID) 46 A 47 A
Drain-source On Resistance-Max 0.073 Ω 0.072 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC TO-247
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 154 A 141 A
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Package Description ROHS COMPLIANT PACKAGE-3
Moisture Sensitivity Level 1

Compare SIHG44N65EF-GE3 with alternatives

Compare R6047ENZ1C9 with alternatives