SIS892ADN-T1-GE3
vs
BUK9M34-100EX
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Not Recommended
|
Active
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
NEXPERIA
|
| Package Description |
HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
|
SMALL OUTLINE, R-PSSO-G4
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Factory Lead Time |
38 Weeks
|
13 Weeks
|
| Samacsys Manufacturer |
Vishay
|
Nexperia
|
| Avalanche Energy Rating (Eas) |
5 mJ
|
57.8 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
28 A
|
29 A
|
| Drain-source On Resistance-Max |
0.033 Ω
|
0.034 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
S-PDSO-C5
|
R-PSSO-G4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
5
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
52 W
|
|
| Pulsed Drain Current-Max (IDM) |
40 A
|
114 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
C BEND
|
GULL WING
|
| Terminal Position |
DUAL
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pin Count |
|
8
|
| Manufacturer Package Code |
|
SOT1210
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reference Standard |
|
AEC-Q101; IEC-60134
|
| Terminal Finish |
|
TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|