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Transistors / Power Field-Effect Transistors / SIS892ADN-T1-GE3
Datasheets
SIS892ADN-T1-GE3 by:

Power Field-Effect Transistor, 28A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8

Part Details for SIS892ADN-T1-GE3 by Vishay Intertechnologies

Overview of SIS892ADN-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SIS892ADN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 63W4139
Newark Mosfet Transistor, N Channel, 28 A, 100 V, 0.027 Ohm, 10 V, 1.5 V Rohs Compliant: Yes |Vishay SIS892ADN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 17318
  • 1 $1.1000
  • 25 $0.9450
  • 100 $0.7270
  • 500 $0.6280
  • 1,000 $0.4460
  • 2,500 $0.4200
  • 5,000 $0.3970
  • 10,000 $0.3900
$0.3900 / $1.1000 Buy Now
DISTI # 99W9583
Newark Mosfet, N Channel, 100V, 28A, Powerpak 1212-8, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:28A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:52W Rohs Compliant: Yes |Vishay SIS892ADN-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.4870
  • 4,000 $0.4380
  • 6,000 $0.4220
  • 10,000 $0.4130
$0.4130 / $0.4870 Buy Now
DISTI # SIS892ADN-T1-GE3
Avnet Americas N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIS892ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.3805
$0.3805 Buy Now
DISTI # 78-SIS892ADN-T1-GE3
Mouser Electronics MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant 51069
  • 1 $1.0200
  • 10 $0.8440
  • 100 $0.6570
  • 500 $0.5570
  • 1,000 $0.4530
  • 3,000 $0.4270
  • 6,000 $0.4060
  • 9,000 $0.3880
$0.3880 / $1.0200 Buy Now
Future Electronics MOSFET 100V 33MOHM@10V 28A N-CH MV T-FET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 6000
Reel
  • 3,000 $0.4000
  • 6,000 $0.3900
  • 9,000 $0.3850
  • 12,000 $0.3800
$0.3800 / $0.4000 Buy Now
Future Electronics MOSFET 100V 33MOHM@10V 28A N-CH MV T-FET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks Container: Reel 0
Reel
  • 3,000 $0.4000
  • 6,000 $0.3900
  • 9,000 $0.3850
  • 12,000 $0.3800
$0.3800 / $0.4000 Buy Now
DISTI # 84416488
Verical Trans MOSFET N-CH 100V 28A 8-Pin PowerPAK 1212 T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2435 Americas - 36000
  • 3,000 $0.7252
$0.7252 Buy Now
DISTI # 80318601
Verical Trans MOSFET N-CH 100V 28A 8-Pin PowerPAK 1212 T/R Min Qty: 15 Package Multiple: 1 Date Code: 2415 Americas - 2280
  • 1,000 $0.4161
$0.4161 Buy Now
DISTI # SIS892ADN-T1-GE3
TTI MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 18000
In Stock
  • 3,000 $0.4150
  • 6,000 $0.3980
  • 9,000 $0.3880
$0.3880 / $0.4150 Buy Now
DISTI # SIS892ADN-T1-GE3
TME Transistor: N-MOSFET, unipolar, 100V, 28A, 52W, PowerPAK® 1212-8 Min Qty: 1 2990
  • 1 $1.0070
  • 10 $0.8310
  • 100 $0.6290
  • 500 $0.5180
  • 1,000 $0.5040
$0.5040 / $1.0070 Buy Now
DISTI # C1S803602021521
Chip1Stop Trans MOSFET N-CH 100V 7.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant pbFree: Yes 36000
  • 3,000 $0.4570
  • 6,000 $0.4540
  • 12,000 $0.4470
  • 21,000 $0.4410
$0.4410 / $0.4570 Buy Now
DISTI # C1S803604227086
Chip1Stop Trans MOSFET N-CH 100V 7.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant pbFree: Yes 2280
  • 1 $1.0107
  • 10 $0.8253
  • 25 $0.8171
  • 100 $0.6329
  • 250 $0.6265
  • 500 $0.5275
  • 1,000 $0.4670
$0.4670 / $1.0107 Buy Now
DISTI # SIS892ADN-T1-GE3
EBV Elektronik Trans MOSFET N-CH 100V 7.4A 8-Pin PowerPAK 1212 T/R (Alt: SIS892ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days EBV - 6000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 6000
  • 3,000 $0.7952
  • 6,000 $0.7358
$0.7358 / $0.7952 Buy Now

Part Details for SIS892ADN-T1-GE3

SIS892ADN-T1-GE3 CAD Models

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SIS892ADN-T1-GE3 Part Data Attributes

Parametric Data
SIS892ADN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIS892ADN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 28A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 26 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 5 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-C5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 52 W
Pulsed Drain Current-Max (IDM) 40 A
Surface Mount YES
Terminal Finish Pure Matte Tin (Sn) - annealed
Terminal Form C BEND
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIS892ADN-T1-GE3

This table gives cross-reference parts and alternative options found for SIS892ADN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIS892ADN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUK9M34-100EX BUK9M34-100E - N-channel 100 V, 34 mΩ logic level MOSFET in LFPAK33@en-us Nexperia SIS892ADN-T1-GE3 vs BUK9M34-100EX

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