SIS892ADN-T1-GE3
vs
BUK9M34-100EX
feature comparison
Part Life Cycle Code |
Not Recommended
|
Active
|
Ihs Manufacturer |
VISHAY SILICONIX
|
NEXPERIA
|
Package Description |
SMALL OUTLINE, S-PDSO-C5
|
SMALL OUTLINE, R-PSSO-G4
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Samacsys Manufacturer |
Vishay
|
Nexperia
|
Avalanche Energy Rating (Eas) |
5 mJ
|
57.8 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
28 A
|
29 A
|
Drain-source On Resistance-Max |
0.033 Ω
|
0.034 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
S-PDSO-C5
|
R-PSSO-G4
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
5
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
SQUARE
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
52 W
|
|
Pulsed Drain Current-Max (IDM) |
40 A
|
114 A
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Pure Matte Tin (Sn) - annealed
|
TIN
|
Terminal Form |
C BEND
|
GULL WING
|
Terminal Position |
DUAL
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pin Count |
|
8
|
Manufacturer Package Code |
|
SOT1210
|
JESD-609 Code |
|
e3
|
Peak Reflow Temperature (Cel) |
|
260
|
Reference Standard |
|
AEC-Q101; IEC-60134
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare SIS892ADN-T1-GE3 with alternatives