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TRANSISTOR POWER, FET, FET General Purpose Power
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIS892ADN-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 100V 28A PPAK1212-8 Min Qty: 1 Lead time: 28 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
14477 In Stock |
|
$0.3882 / $1.0300 | Buy Now |
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SIS892ADN-T1-GE3
Vishay Siliconix
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Datasheet
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SIS892ADN-T1-GE3
Vishay Siliconix
TRANSISTOR POWER, FET, FET General Purpose Power
|
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | SMALL OUTLINE, S-PDSO-C5 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 5 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-C5 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 52 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Surface Mount | YES | |
Terminal Finish | Pure Matte Tin (Sn) - annealed | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SIS892ADN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIS892ADN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BUK9M34-100EX | BUK9M34-100E - N-channel 100 V, 34 mΩ logic level MOSFET in LFPAK33@en-us | Nexperia | SIS892ADN-T1-GE3 vs BUK9M34-100EX |
934064654115 | 27A, 100V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, 3.30 X 3.30 MM, 1 MM HEIGHT, PLASTIC, QFN3333, 8 PIN | NXP Semiconductors | SIS892ADN-T1-GE3 vs 934064654115 |
SIS892ADN-T1-GE3 | Power Field-Effect Transistor, 28A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8 | Vishay Intertechnologies | SIS892ADN-T1-GE3 vs SIS892ADN-T1-GE3 |