SP001578112 vs IRFR5410TRLPBF feature comparison

SP001578112 Infineon Technologies AG

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IRFR5410TRLPBF Infineon Technologies AG

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 194 mJ 194 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 13 A 13 A
Drain-source On Resistance-Max 0.205 Ω 0.205 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 170 pF
JEDEC-95 Code TO-252AA TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 66 W 66 W
Pulsed Drain Current-Max (IDM) 52 A 52 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Package Description SMALL OUTLINE, R-PSSO-G2
Factory Lead Time 65 Weeks
Samacsys Manufacturer Infineon
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Time@Peak Reflow Temperature-Max (s) 30

Compare SP001578112 with alternatives

Compare IRFR5410TRLPBF with alternatives