SPB20N60C3ATMA1 vs SIHB22N65E-GE3 feature comparison

SPB20N60C3ATMA1 Infineon Technologies AG

Buy Now Datasheet

SIHB22N65E-GE3 Vishay Intertechnologies

Buy Now Datasheet
Pbfree Code No Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG VISHAY INTERTECHNOLOGY INC
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 15 Weeks 22 Weeks
Samacsys Manufacturer Infineon Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 690 mJ 691 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 650 V
Drain Current-Max (ID) 20.7 A 22 A
Drain-source On Resistance-Max 0.19 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 62.1 A 56 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Case Connection DRAIN
Feedback Cap-Max (Crss) 4 pF
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 227 W
Transistor Application SWITCHING
Turn-off Time-Max (toff) 186 ns
Turn-on Time-Max (ton) 111 ns

Compare SPB20N60C3ATMA1 with alternatives

Compare SIHB22N65E-GE3 with alternatives