SPD30N03S2L07GBTMA1
vs
RJK03B7DPA-00-J5A
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
RENESAS ELECTRONICS CORP
|
Package Description |
GREEN, PLASTIC PACKAGE-3/2
|
SMALL OUTLINE, R-PDSO-N5
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
4 Weeks
|
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
250 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
30 A
|
30 A
|
Drain-source On Resistance-Max |
0.0098 Ω
|
0.0107 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252
|
|
JESD-30 Code |
R-PSSO-G2
|
R-PDSO-N5
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
5
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
120 A
|
120 A
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
NO LEAD
|
Terminal Position |
SINGLE
|
DUAL
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Rohs Code |
|
Yes
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
30 W
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare SPD30N03S2L07GBTMA1 with alternatives
Compare RJK03B7DPA-00-J5A with alternatives