SPD30N03S2L07GBTMA1 vs RJK03B7DPA-00-J5A feature comparison

SPD30N03S2L07GBTMA1 Infineon Technologies AG

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RJK03B7DPA-00-J5A Renesas Electronics Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG RENESAS ELECTRONICS CORP
Package Description GREEN, PLASTIC PACKAGE-3/2 SMALL OUTLINE, R-PDSO-N5
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.0098 Ω 0.0107 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 R-PDSO-N5
Number of Elements 1 1
Number of Terminals 2 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A 120 A
Surface Mount YES YES
Terminal Form GULL WING NO LEAD
Terminal Position SINGLE DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Rohs Code Yes
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 30 W
Transistor Application SWITCHING

Compare SPD30N03S2L07GBTMA1 with alternatives

Compare RJK03B7DPA-00-J5A with alternatives