SQ2310ES-T1-GE3 vs SI3442CDV-T1-GE3 feature comparison

SQ2310ES-T1-GE3 Vishay Siliconix

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SI3442CDV-T1-GE3 Vishay Intertechnologies

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Pbfree Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY SILICONIX VISHAY INTERTECHNOLOGY INC
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3 HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
Pin Count 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay Vishay
Avalanche Energy Rating (Eas) 5 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 6 A 6.6 A
Drain-source On Resistance-Max 0.03 Ω 0.027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 46 pF
JEDEC-95 Code TO-236AB MO-193AA
JESD-30 Code R-PDSO-G3 R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 NOT SPECIFIED
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 46 ns
Turn-on Time-Max (ton) 23 ns
Base Number Matches 1 1
Rohs Code Yes
Power Dissipation-Max (Abs) 2.7 W
Transistor Application SWITCHING

Compare SQ2310ES-T1-GE3 with alternatives

Compare SI3442CDV-T1-GE3 with alternatives