SS110LW vs GS1B-HF feature comparison

SS110LW Taiwan Semiconductor

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GS1B-HF Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code not_compliant compliant
Factory Lead Time 8 Weeks
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature LOW POWER LOSS LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.8 V 1.1 V
JESD-30 Code R-PDSO-F2 R-PDSO-C2
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 10 µA 5 µA
Surface Mount YES YES
Technology SCHOTTKY
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Package Description R-PDSO-C2
ECCN Code EAR99
HTS Code 8541.10.00.80
Date Of Intro 2019-04-04
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Recovery Time-Max 2.5 µs
Reverse Test Voltage 100 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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