SSS4N60B
vs
STP75NF75
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
STMICROELECTRONICS
|
Part Package Code |
TO-220F
|
TO-220AB
|
Package Description |
TO-220F, 3 PIN
|
ROHS COMPLIANT, TO-220, 3 PIN
|
Pin Count |
3
|
3
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
240 mJ
|
700 mJ
|
Case Connection |
ISOLATED
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
75 V
|
Drain Current-Max (ID) |
4 A
|
80 A
|
Drain-source On Resistance-Max |
2.5 Ω
|
0.011 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
33 W
|
300 W
|
Pulsed Drain Current-Max (IDM) |
16 A
|
320 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
MATTE TIN
|
Matte Tin (Sn)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
3
|
Factory Lead Time |
|
26 Weeks
|
Samacsys Manufacturer |
|
STMicroelectronics
|
JEDEC-95 Code |
|
TO-220AB
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare SSS4N60B with alternatives
Compare STP75NF75 with alternatives