STB8NM60N vs STP75NF75 feature comparison

STB8NM60N STMicroelectronics

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STP75NF75 STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer STMICROELECTRONICS STMICROELECTRONICS
Part Package Code D2PAK TO-220AB
Package Description ROHS COMPLIANT, TO-263, D2PAK-3 ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 4 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE ENERGY RATED
Avalanche Energy Rating (Eas) 200 mJ 700 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 75 V
Drain Current-Max (ID) 7 A 80 A
Drain-source On Resistance-Max 0.65 Ω 0.011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 245 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 70 W 300 W
Pulsed Drain Current-Max (IDM) 28 A 320 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Factory Lead Time 26 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection DRAIN

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