STE180NE10 vs APT10M07JVR feature comparison

STE180NE10 STMicroelectronics

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APT10M07JVR Advanced Power Technology

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS ADVANCED POWER TECHNOLOGY INC
Part Package Code ISOTOP
Package Description ROHS COMPLIANT, ISOTOP-4 ISOTOP-4
Pin Count 4
Manufacturer Package Code ISOTOP
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer STMicroelectronics
Additional Feature AVALANCHE RATED HIGH VOLTAGE
Avalanche Energy Rating (Eas) 720 mJ 3600 mJ
Case Connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 180 A 225 A
Drain-source On Resistance-Max 6 Ω 0.007 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4 R-PUFM-X4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 360 W 700 W
Pulsed Drain Current-Max (IDM) 360 A 900 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish NICKEL
Terminal Form UNSPECIFIED UNSPECIFIED
Terminal Position UPPER UPPER
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare STE180NE10 with alternatives

Compare APT10M07JVR with alternatives