APT10M07JVR vs IXFN280N085 feature comparison

APT10M07JVR Microsemi Corporation

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IXFN280N085 IXYS Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP IXYS CORP
Part Package Code ISOTOP
Pin Count 4 4
Manufacturer Package Code ISOTOP
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Drain Current-Max (ID) 225 A 280 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Number of Elements 1 1
Operating Temperature-Max 150 °C 150 °C
Power Dissipation-Max (Abs) 700 W 700 W
Base Number Matches 2 1
Pbfree Code Yes
Rohs Code Yes
Package Description FLANGE MOUNT, R-PUFM-X4
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 4000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 85 V
Drain-source On Resistance-Max 0.0044 Ω
JESD-30 Code R-PUFM-X4
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 1120 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare APT10M07JVR with alternatives

Compare IXFN280N085 with alternatives