STI26NM60N
vs
SCT3120ALC11
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
STMICROELECTRONICS
|
ROHM CO LTD
|
| Part Package Code |
TO-262AA
|
|
| Package Description |
TO-262, I2PAK-3
|
FLANGE MOUNT, R-PSFM-T3
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
STMicroelectronics
|
|
| Avalanche Energy Rating (Eas) |
610 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
600 V
|
650 V
|
| Drain Current-Max (ID) |
20 A
|
21 A
|
| Drain-source On Resistance-Max |
0.165 Ω
|
0.156 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-262AA
|
TO-247
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
80 A
|
52 A
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON CARBIDE
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Date Of Intro |
|
2016-06-28
|
| JESD-609 Code |
|
e3
|
| Peak Reflow Temperature (Cel) |
|
265
|
| Terminal Finish |
|
TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare STI26NM60N with alternatives
Compare SCT3120ALC11 with alternatives