SUB85N04-04
vs
NP80N04EHE
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
SILICONIX INC
|
NEC ELECTRONICS CORP
|
| Part Package Code |
D2PAK
|
D2PAK
|
| Package Description |
,
|
SMALL OUTLINE, R-PSSO-G2
|
| Pin Count |
4
|
4
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (ID) |
85 A
|
80 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
250 W
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
| Base Number Matches |
1
|
3
|
| Avalanche Energy Rating (Eas) |
|
169 mJ
|
| Case Connection |
|
DRAIN
|
| DS Breakdown Voltage-Min |
|
40 V
|
| Drain-source On Resistance-Max |
|
0.008 Ω
|
| JEDEC-95 Code |
|
TO-263AB
|
| JESD-30 Code |
|
R-PSSO-G2
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Pulsed Drain Current-Max (IDM) |
|
280 A
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
SINGLE
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare SUB85N04-04 with alternatives
Compare NP80N04EHE with alternatives