SUB85N04-04
vs
STB190NF04T4
feature comparison
Pbfree Code |
No
|
Yes
|
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
SILICONIX INC
|
STMICROELECTRONICS
|
Part Package Code |
D2PAK
|
|
Package Description |
,
|
ROHS COMPLIANT, D2PAK-3
|
Pin Count |
4
|
3
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
Drain Current-Max (ID) |
85 A
|
120 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-609 Code |
e0
|
e3
|
Number of Elements |
1
|
1
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
250 W
|
310 W
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn)
|
Base Number Matches |
1
|
1
|
Avalanche Energy Rating (Eas) |
|
860 mJ
|
DS Breakdown Voltage-Min |
|
40 V
|
Drain-source On Resistance-Max |
|
0.0043 Ω
|
JESD-30 Code |
|
R-PSSO-G2
|
Moisture Sensitivity Level |
|
1
|
Number of Terminals |
|
2
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Pulsed Drain Current-Max (IDM) |
|
480 A
|
Qualification Status |
|
Not Qualified
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
Compare SUB85N04-04 with alternatives
Compare STB190NF04T4 with alternatives