SVN98AJ
vs
SI3441BDV-T1-E3
feature comparison
Pbfree Code |
No
|
Yes
|
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
SOLITRON DEVICES INC
|
VISHAY SILICONIX
|
Part Package Code |
DIE
|
TSOP
|
Package Description |
DIE
|
SMALL OUTLINE, R-PDSO-G6
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
ISOLATED
|
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Pin Count |
|
6
|
Samacsys Manufacturer |
|
Vishay
|
Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
|
20 V
|
Drain Current-Max (ID) |
|
2.45 A
|
Drain-source On Resistance-Max |
|
0.09 Ω
|
FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
|
R-PDSO-G6
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Number of Elements |
|
1
|
Number of Terminals |
|
6
|
Operating Mode |
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
|
150 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Polarity/Channel Type |
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
|
1.25 W
|
Surface Mount |
|
YES
|
Terminal Finish |
|
MATTE TIN
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
DUAL
|
|
|
|
Compare SVN98AJ with alternatives
Compare SI3441BDV-T1-E3 with alternatives