TC55VEM416AXBN55 vs K6F1616U6M-EF550 feature comparison

TC55VEM416AXBN55 Toshiba America Electronic Components

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K6F1616U6M-EF550 Samsung Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description 8 X 11 MM, 0.75 MM PITCH, PLASTIC, TFBGA-48 VFBGA,
Pin Count 48 48
Reach Compliance Code unknown compliant
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 55 ns 55 ns
I/O Type COMMON
JESD-30 Code R-PBGA-B48 R-PBGA-B48
Length 11 mm 12 mm
Memory Density 16777216 bit 16777216 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 48 48
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 1MX16 1MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA VFBGA
Package Equivalence Code BGA48,6X8,30
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1 mm
Standby Voltage-Min 1.5 V
Supply Current-Max 0.035 mA
Supply Voltage-Max (Vsup) 3.6 V 3.3 V
Supply Voltage-Min (Vsup) 2.3 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.75 mm 0.75 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm 9 mm
Base Number Matches 1 1

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