TD62003AP vs MC1413BD feature comparison

TD62003AP Toshiba America Electronic Components

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MC1413BD onsemi

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Pbfree Code No No
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP ON SEMICONDUCTOR
Part Package Code DIP SOIC 16 LEAD
Package Description IN-LINE, R-PDIP-T16 SMALL OUTLINE, R-PDSO-G16
Pin Count 16 16
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Toshiba onsemi
Additional Feature LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Collector Current-Max (IC) 500 A 0.5 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration COMPLEX COMPLEX
DC Current Gain-Min (hFE) 1000 1000
JESD-30 Code R-PDIP-T16 R-PDSO-G16
JESD-609 Code e0 e0
Number of Elements 7 7
Number of Terminals 16 16
Operating Temperature-Max 85 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
VCEsat-Max 1.6 V
Base Number Matches 4 4
Manufacturer Package Code 751B-05
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 235

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