TK20C60W vs RFP5P12 feature comparison

TK20C60W Toshiba America Electronic Components

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RFP5P12 Harris Semiconductor

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Rohs Code No No
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer TOSHIBA CORP HARRIS SEMICONDUCTOR
Package Description IN-LINE, R-PSIP-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 120 V
Drain Current-Max (ID) 20 A 5 A
Drain-source On Resistance-Max 0.155 Ω 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 165 W 60 W
Pulsed Drain Current-Max (IDM) 80 A 15 A
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 5
HTS Code 8541.29.00.95
Feedback Cap-Max (Crss) 100 pF
JEDEC-95 Code TO-220AB
JESD-609 Code e0
Power Dissipation Ambient-Max 60 W
Qualification Status Not Qualified
Terminal Finish TIN LEAD
Turn-off Time-Max (toff) 250 ns
Turn-on Time-Max (ton) 160 ns

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