TMM2016BP-12
vs
HM1-6116-2
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
TOSHIBA CORP
|
HARRIS SEMICONDUCTOR
|
Package Description |
DIP, DIP24,.6
|
,
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Samacsys Manufacturer |
Toshiba
|
|
Access Time-Max |
12 ns
|
|
Additional Feature |
LG-MAX
|
|
I/O Type |
COMMON
|
|
JESD-30 Code |
R-PDIP-T24
|
|
JESD-609 Code |
e0
|
|
Length |
32.4 mm
|
|
Memory Density |
16384 bit
|
|
Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
Memory Width |
8
|
|
Number of Functions |
1
|
|
Number of Terminals |
24
|
|
Number of Words |
2048 words
|
|
Number of Words Code |
2000
|
|
Operating Mode |
ASYNCHRONOUS
|
|
Operating Temperature-Max |
70 °C
|
|
Operating Temperature-Min |
|
|
Organization |
2KX8
|
|
Output Characteristics |
3-STATE
|
|
Output Enable |
YES
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Code |
DIP
|
|
Package Equivalence Code |
DIP24,.6
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
IN-LINE
|
|
Parallel/Serial |
PARALLEL
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
5 mm
|
|
Standby Current-Max |
0.005 A
|
|
Standby Voltage-Min |
4.5 V
|
|
Supply Current-Max |
0.05 mA
|
|
Supply Voltage-Max (Vsup) |
5.5 V
|
|
Supply Voltage-Min (Vsup) |
4.5 V
|
|
Supply Voltage-Nom (Vsup) |
5 V
|
|
Surface Mount |
NO
|
|
Technology |
MOS
|
|
Temperature Grade |
COMMERCIAL
|
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
Terminal Form |
THROUGH-HOLE
|
|
Terminal Pitch |
2.54 mm
|
|
Terminal Position |
DUAL
|
|
Width |
15.24 mm
|
|
Base Number Matches |
1
|
5
|
|
|
|
Compare TMM2016BP-12 with alternatives
Compare HM1-6116-2 with alternatives