UBAT54ATA
vs
BAS85T/R
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
ZETEX PLC
|
NXP SEMICONDUCTORS
|
| Package Description |
R-PDSO-G3
|
O-LELF-R2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Additional Feature |
LOW NOISE
|
ULTRA HIGH SPEED SWITCH
|
| Configuration |
COMMON ANODE, 2 ELEMENTS
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
0.8 V
|
| JESD-30 Code |
R-PDSO-G3
|
O-LELF-R2
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Pk Forward Current-Max |
0.6 A
|
5 A
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Output Current-Max |
0.2 A
|
0.2 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Power Dissipation-Max |
0.33 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
30 V
|
30 V
|
| Reverse Current-Max |
4 µA
|
2 µA
|
| Reverse Recovery Time-Max |
0.005 µs
|
0.004 µs
|
| Surface Mount |
YES
|
YES
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Finish |
MATTE TIN
|
TIN
|
| Terminal Form |
GULL WING
|
WRAP AROUND
|
| Terminal Position |
DUAL
|
END
|
| Base Number Matches |
2
|
3
|
| Pin Count |
|
2
|
| Case Connection |
|
ISOLATED
|
| Number of Phases |
|
1
|
| Operating Temperature-Min |
|
-40 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare UBAT54ATA with alternatives
Compare BAS85T/R with alternatives