UGB18DCTHE3_A/P vs BYQ30EB-200/T3 feature comparison

UGB18DCTHE3_A/P Vishay Intertechnologies

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BYQ30EB-200/T3 NXP Semiconductors

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC NXP SEMICONDUCTORS
Package Description D2PAK-3/2 R-PSSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Factory Lead Time 40 Weeks
Date Of Intro 2019-07-04
Additional Feature FREE WHEELING DIODE
Application EFFICIENCY ULTRA FAST SOFT RECOVERY
Case Connection CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Non-rep Pk Forward Current-Max 175 A 88 A
Number of Elements 2 2
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 9 A 8 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 0.03 µs 0.025 µs
Reverse Test Voltage 200 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 1 1
HTS Code 8541.10.00.80
Qualification Status Not Qualified

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