UPA2755AGR-E1-AT vs SH8K15GZETB feature comparison

UPA2755AGR-E1-AT Renesas Electronics Corporation

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SH8K15GZETB ROHM Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Not Recommended
Ihs Manufacturer RENESAS ELECTRONICS CORP ROHM CO LTD
Part Package Code SOP
Package Description SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Manufacturer Package Code PRSP0008DN-A8
Reach Compliance Code unknown compliant
ECCN Code 5A002 EAR99
Samacsys Manufacturer Renesas Electronics
Avalanche Energy Rating (Eas) 6.4 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 8 A 9 A
Drain-source On Resistance-Max 0.029 Ω 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 32 A 36 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Moisture Sensitivity Level 1
Time@Peak Reflow Temperature-Max (s) 10

Compare UPA2755AGR-E1-AT with alternatives

Compare SH8K15GZETB with alternatives