Datasheets
SH8K15GZETB by: ROHM Semiconductor

Power Field-Effect Transistor, 9A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for SH8K15GZETB by ROHM Semiconductor

Overview of SH8K15GZETB by ROHM Semiconductor

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Part Details for SH8K15GZETB

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SH8K15GZETB Part Data Attributes

SH8K15GZETB ROHM Semiconductor
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SH8K15GZETB ROHM Semiconductor Power Field-Effect Transistor, 9A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 36 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SH8K15GZETB

This table gives cross-reference parts and alternative options found for SH8K15GZETB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SH8K15GZETB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
UPA2755AGR-E2-AT Switching N-Channel Power MOSFET, SOP, /Embossed Tape Renesas Electronics Corporation SH8K15GZETB vs UPA2755AGR-E2-AT
SH8K15TB Power Field-Effect Transistor, 9A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 ROHM Semiconductor SH8K15GZETB vs SH8K15TB
UPA2755AGR-E1-AT Switching N-Channel Power MOSFET, SOP, /Embossed Tape Renesas Electronics Corporation SH8K15GZETB vs UPA2755AGR-E1-AT

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