UPA812TFB
vs
UPA812TFB-A
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
NEC ELECTRONICS CORP
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.065 A
|
0.065 A
|
| Collector-Base Capacitance-Max |
0.9 pF
|
0.9 pF
|
| Collector-Emitter Voltage-Max |
10 V
|
10 V
|
| Configuration |
SEPARATE, 2 ELEMENTS
|
SEPARATE, 2 ELEMENTS
|
| DC Current Gain-Min (hFE) |
70
|
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
R-PDSO-G6
|
R-PDSO-G6
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
6
|
6
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.2 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
7000 MHz
|
7000 MHz
|
| Base Number Matches |
3
|
2
|
| Rohs Code |
|
Yes
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G6
|
| JESD-609 Code |
|
e6
|
| Terminal Finish |
|
TIN BISMUTH
|
|
|
|
Compare UPA812TFB with alternatives
Compare UPA812TFB-A with alternatives