US1MHE3_A/I vs S1M feature comparison

US1MHE3_A/I Vishay Intertechnologies

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S1M Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description SMA, 2 PIN SMA, 2 PIN
Reach Compliance Code not_compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay
Additional Feature FREE WHEELING DIODE LOW POWER LOSS
Application EFFICIENCY
Breakdown Voltage-Min 1000 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.7 V
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 0.075 µs 2.5 µs
Reverse Test Voltage 1000 V
Surface Mount YES YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 26
Qualification Status Not Qualified

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