VN2460N3-GP003
vs
TN5335K1-G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
CYLINDRICAL, O-PBCY-T3
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
8541.29.00.95
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
600 V
|
350 V
|
| Drain-source On Resistance-Max |
25 Ω
|
15 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
25 pF
|
22 pF
|
| JEDEC-95 Code |
TO-92
|
TO-236AB
|
| JESD-30 Code |
O-PBCY-T3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
Microchip
|
| Drain Current-Max (ID) |
|
0.11 A
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation Ambient-Max |
|
0.36 W
|
| Power Dissipation-Max (Abs) |
|
0.36 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare VN2460N3-GP003 with alternatives
Compare TN5335K1-G with alternatives