VP2110K1-G vs 2SK303-3-TA feature comparison

VP2110K1-G Microchip Technology Inc

Buy Now Datasheet

2SK303-3-TA SANYO Electric Co Ltd

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC SANYO ELECTRIC CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Factory Lead Time 8 Weeks
Samacsys Manufacturer Microchip
Additional Feature LOW THRESHOLD LOW NOISE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.12 A 0.02 A
Drain-source On Resistance-Max 12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JUNCTION
Feedback Cap-Max (Crss) 8 pF
JEDEC-95 Code TO-236AB TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE DEPLETION MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 0.36 W
Power Dissipation-Max (Abs) 0.36 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Package Description SMALL OUTLINE, R-PDSO-G3

Compare VP2110K1-G with alternatives

Compare 2SK303-3-TA with alternatives