VQ1000P
vs
RBVQ1001P
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
TEMIC SEMICONDUCTORS
|
SUPERTEX INC
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
FAST SWITCHING, LOGIC LEVEL COMPATIBLE
|
|
Configuration |
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
30 V
|
Drain Current-Max (ID) |
0.225 A
|
0.85 A
|
Drain-source On Resistance-Max |
5.5 Ω
|
1 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDIP-T14
|
R-CDIP-T14
|
Number of Elements |
4
|
4
|
Number of Terminals |
14
|
14
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
1 A
|
3 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
1
|
Package Description |
|
IN-LINE, R-CDIP-T14
|
Feedback Cap-Max (Crss) |
|
35 pF
|
Operating Temperature-Max |
|
150 °C
|
Turn-off Time-Max (toff) |
|
30 ns
|
Turn-on Time-Max (ton) |
|
30 ns
|
|
|
|
Compare VQ1000P with alternatives
Compare RBVQ1001P with alternatives