VQ7254N7
vs
DN3545N3-G
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SUPERTEX INC
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
IN-LINE, R-CDIP-T14
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Configuration |
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
450 V
|
| Drain Current-Max (ID) |
1.6 A
|
0.136 A
|
| Drain-source On Resistance-Max |
2 Ω
|
20 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
50 pF
|
15 pF
|
| JESD-30 Code |
R-CDIP-T14
|
O-PBCY-T3
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
4
|
1
|
| Number of Terminals |
14
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
IN-LINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL AND P-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
2 W
|
|
| Power Dissipation-Max (Abs) |
2 W
|
0.74 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
MATTE TIN
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| Factory Lead Time |
|
11 Weeks
|
| Samacsys Manufacturer |
|
Microchip
|
| Additional Feature |
|
HIGH INPUT IMPEDANCE
|
| JEDEC-95 Code |
|
TO-92
|
| Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare VQ7254N7 with alternatives
Compare DN3545N3-G with alternatives