Datasheets
0912GN-50LEL by: Microsemi Corporation

RF Power Field-Effect Transistor,

Part Details for 0912GN-50LEL by Microsemi Corporation

Overview of 0912GN-50LEL by Microsemi Corporation

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Applications Environmental Monitoring Industrial Automation

Part Details for 0912GN-50LEL

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0912GN-50LEL Part Data Attributes

0912GN-50LEL Microsemi Corporation
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0912GN-50LEL Microsemi Corporation RF Power Field-Effect Transistor,
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Configuration SINGLE
DS Breakdown Voltage-Min 150 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-XDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 100 W
Power Gain-Min (Gp) 15.2 dB
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM NITRIDE

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