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Overview of 10N60G-TF3-T by Unisonic Technologies Co Ltd
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 8 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
CAD Models for 10N60G-TF3-T by Unisonic Technologies Co Ltd
Part Data Attributes for 10N60G-TF3-T by Unisonic Technologies Co Ltd
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
UNISONIC TECHNOLOGIES CO LTD
|
Part Package Code
|
TO-220AB
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Avalanche Energy Rating (Eas)
|
700 mJ
|
Case Connection
|
ISOLATED
|
Configuration
|
SINGLE
|
DS Breakdown Voltage-Min
|
600 V
|
Drain Current-Max (ID)
|
10 A
|
Drain-source On Resistance-Max
|
0.75 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
24 pF
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
50 W
|
Pulsed Drain Current-Max (IDM)
|
38 A
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
465 ns
|
Turn-on Time-Max (ton)
|
205 ns
|
Alternate Parts for 10N60G-TF3-T
This table gives cross-reference parts and alternative options found for 10N60G-TF3-T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 10N60G-TF3-T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
10N60G-TF1-T | Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F1, 3 PIN | Unisonic Technologies Co Ltd | 10N60G-TF3-T vs 10N60G-TF1-T |
STH10NK60ZFI | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, ISOWATT218, 3 PIN | STMicroelectronics | 10N60G-TF3-T vs STH10NK60ZFI |
STF12NK65Z | Power MOSFETs, N-channel 650 V, 0.57 Ohm, 10 A, TO-220FP | STMicroelectronics | 10N60G-TF3-T vs STF12NK65Z |
TK10A60E | Nch 500V<VDSS≤700V | Toshiba America Electronic Components | 10N60G-TF3-T vs TK10A60E |
TK11A65D | TRANSISTOR 11 A, 650 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, 2-10U1S, SC-67, TO-220SIS, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | 10N60G-TF3-T vs TK11A65D |
10N60L-TF3-T | Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | 10N60G-TF3-T vs 10N60L-TF3-T |
AP3989I | TRANSISTOR 10 A, 600 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | 10N60G-TF3-T vs AP3989I |
STH10NC60FI | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN | STMicroelectronics | 10N60G-TF3-T vs STH10NC60FI |