Part Details for 15112GOA by Microsemi Corporation
Overview of 15112GOA by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 15112GOA
15112GOA CAD Models
15112GOA Part Data Attributes
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15112GOA
Microsemi Corporation
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Datasheet
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15112GOA
Microsemi Corporation
Silicon Controlled Rectifier, 235A I(T)RMS, 235000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICROSEMI CORP | |
Part Package Code | TO-93 | |
Package Description | POST/STUD MOUNT, O-MUPM-H3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.30.00.80 | |
Circuit Commutated Turn-off Time-Nom | 100 µs | |
Configuration | SINGLE | |
Critical Rate of Rise of Off-State Voltage-Min | 200 V/us | |
DC Gate Trigger Current-Max | 150 mA | |
DC Gate Trigger Voltage-Max | 3 V | |
Holding Current-Max | 200 mA | |
JEDEC-95 Code | TO-209AB | |
JESD-30 Code | O-MUPM-H3 | |
JESD-609 Code | e0 | |
Leakage Current-Max | 15 mA | |
Non-Repetitive Pk On-state Cur | 3500 A | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
On-state Current-Max | 235000 A | |
Operating Temperature-Max | 125 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | POST/STUD MOUNT | |
Qualification Status | Not Qualified | |
RMS On-state Current-Max | 235 A | |
Repetitive Peak Off-state Leakage Current-Max | 15000 µA | |
Repetitive Peak Off-state Voltage | 1200 V | |
Repetitive Peak Reverse Voltage | 1200 V | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | HIGH CURRENT CABLE | |
Terminal Position | UPPER | |
Trigger Device Type | SCR |
Alternate Parts for 15112GOA
This table gives cross-reference parts and alternative options found for 15112GOA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 15112GOA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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ST180S12P0V | Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB, HERMETIC SEALED, METAL, TO-93, 3 PIN | International Rectifier | 15112GOA vs ST180S12P0V |
C180P | Silicon Controlled Rectifier, 235A I(T)RMS, 150000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, | Powerex Power Semiconductors | 15112GOA vs C180P |
150C100BE3 | Silicon Controlled Rectifier, 235A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN | Microsemi Corporation | 15112GOA vs 150C100BE3 |
SKT130/08C | Silicon Controlled Rectifier, 204.1A I(T)RMS, 130000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209 | SEMIKRON | 15112GOA vs SKT130/08C |
2N3895 | Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, | Powerex Power Semiconductors | 15112GOA vs 2N3895 |
15108GOA | Silicon Controlled Rectifier, 235A I(T)RMS, 235000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN | Microsemi Corporation | 15112GOA vs 15108GOA |
SKT130/12CUNF | Silicon Controlled Rectifier, 220A I(T)RMS, 130000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209 | SEMIKRON | 15112GOA vs SKT130/12CUNF |
2N3892 | Silicon Controlled Rectifier, 175000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-93, | Semitronics Corp | 15112GOA vs 2N3892 |
SKT130/12C | Silicon Controlled Rectifier, 204.1A I(T)RMS, 130000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209 | SEMIKRON | 15112GOA vs SKT130/12C |
2N3891 | Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 700V V(DRM), 700V V(RRM), 1 Element, | Powerex Power Semiconductors | 15112GOA vs 2N3891 |