Part Details for 1N5408G by Sangdest Microelectronics (Nanjing) Co Ltd
Overview of 1N5408G by Sangdest Microelectronics (Nanjing) Co Ltd
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Part Details for 1N5408G
1N5408G CAD Models
1N5408G Part Data Attributes
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1N5408G
Sangdest Microelectronics (Nanjing) Co Ltd
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Datasheet
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1N5408G
Sangdest Microelectronics (Nanjing) Co Ltd
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | SANGDEST MICROELECTRONICS (NANJING) CO LTD | |
Package Description | PLASTIC PACKAGE-2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1.1 V | |
JEDEC-95 Code | DO-201AD | |
JESD-30 Code | O-PALF-W2 | |
Non-rep Pk Forward Current-Max | 200 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Output Current-Max | 3 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Rep Pk Reverse Voltage-Max | 1000 V | |
Reverse Current-Max | 5 µA | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | AXIAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for 1N5408G
This table gives cross-reference parts and alternative options found for 1N5408G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5408G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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1N5408G | Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-27, | Hitano Enterprise Corp | 1N5408G vs 1N5408G |
1N5408G | Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, | Daco Semiconductor Co Ltd | 1N5408G vs 1N5408G |
1N5408GD1 | Rectifier Diode, | Yangzhou Yangjie Electronics Co Ltd | 1N5408G vs 1N5408GD1 |
1N5408G | Standard Recovery Rectifier, 1000 V, 3.0 A, Axial Lead 9.65x5.33mm, 25.4x1.22mm Pkg, Lead len/dia, 500-BLKBX | onsemi | 1N5408G vs 1N5408G |
1N5408G | Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-27, | Diotec Electronics Corp | 1N5408G vs 1N5408G |
1N5408G | Rectifier Diode, | Yangzhou Yangjie Electronics Co Ltd | 1N5408G vs 1N5408G |