Part Details for 1N649-1E3 by Microsemi Corporation
Overview of 1N649-1E3 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Part Details for 1N649-1E3
1N649-1E3 CAD Models
1N649-1E3 Part Data Attributes:
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1N649-1E3
Microsemi Corporation
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Datasheet
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1N649-1E3
Microsemi Corporation
Rectifier Diode, Zener, 1 Element, 0.15A, Silicon, DO-35, SIMILAR TO DO-35, 2 PIN
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | SIMILAR TO DO-35, 2 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.70 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Dynamic Impedance-Max | 5 Ω | |
| JEDEC-95 Code | DO-35 | |
| JESD-30 Code | O-XALF-W2 | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Output Current-Max | 0.15 A | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Polarity | UNIDIRECTIONAL | |
| Power Dissipation-Max | 0.5 W | |
| Reference Voltage-Nom | 5.6 V | |
| Surface Mount | NO | |
| Technology | ZENER | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL | |
| Voltage Tol-Max | 5% | |
| Working Test Current | 45 mA |
Alternate Parts for 1N649-1E3
This table gives cross-reference parts and alternative options found for 1N649-1E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N649-1E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 1N649M | Rectifier Diode, 1 Element, 0.4A, Silicon, | Bkc Semiconductors Inc | 1N649-1E3 vs 1N649M |
| JAN1N649-1 | Rectifier Diode, 1 Phase, 1 Element, 0.4A, 600V V(RRM), Silicon, DO-35 | Microchip Technology Inc | 1N649-1E3 vs JAN1N649-1 |
| 1N649-1 | Rectifier Diode, 1 Phase, 1 Element, 0.4A, 600V V(RRM), Silicon, DO-35 | Microchip Technology Inc | 1N649-1E3 vs 1N649-1 |
| 1N649-1 | Rectifier Diode, 1 Element, 0.4A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 | Microsemi Corporation | 1N649-1E3 vs 1N649-1 |
| JANTX1N649-1 | Rectifier Diode, 1 Element, 0.15A, 600V V(RRM), Silicon, SIMILAR TO DO-35, 2 PIN | General Instrument Corp | 1N649-1E3 vs JANTX1N649-1 |
| JAN1N649-1 | Rectifier Diode, 1 Element, 0.4A, 600V V(RRM), Silicon, DO-35, HERMETIC SEALED, MICRO MINIATURE, GLASS, C PACKAGE-2 | Microsemi Corporation | 1N649-1E3 vs JAN1N649-1 |
| JAN1N649-1 | Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35, SIMILAR TO DO-35, 2 PIN | Bkc Semiconductors Inc | 1N649-1E3 vs JAN1N649-1 |
| JANS1N649-1 | Rectifier Diode, 1 Element, 0.4A, 600V V(RRM), Silicon, DO-35, HERMETIC SEALED, MICRO MINIATURE, GLASS, C PACKAGE-2 | Microsemi Corporation | 1N649-1E3 vs JANS1N649-1 |