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Diodes / Rectifier Diodes / 1N5402-G
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1N5402-G by:

Rectifier Diode, 1 Element, 3A, 200V V(RRM),

Part Details for 1N5402-G by Comchip Technology Corporation Ltd

Overview of 1N5402-G by Comchip Technology Corporation Ltd

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for 1N5402-G

Part # Distributor Description Stock Price Buy
DISTI # 1N5402-G-ND
DigiKey DIODE GEN PURP 200V 3A DO27 Min Qty: 6000 Lead time: 10 Weeks Container: Tape & Box (TB) Temporarily Out of Stock
  • 6,000 $0.1061
  • 12,000 $0.0954
  • 30,000 $0.0940
  • 60,000 $0.0884
$0.0884 / $0.1061 Buy Now
DISTI # 750-1N5402-G
Mouser Electronics Diodes - General Purpose, Power, Switching VR=200V, IO=3A RoHS: Compliant 8187
  • 1 $0.4000
  • 10 $0.3180
  • 100 $0.1900
  • 500 $0.1760
  • 1,200 $0.1200
  • 2,400 $0.1100
  • 9,600 $0.0950
  • 24,000 $0.0940
  • 49,200 $0.0880
$0.0880 / $0.4000 Buy Now
Karl Kruse GmbH & Co KG   6000
RFQ
NAC Rectifier Diode, 1 Element, 3A, 200V V(RRM) RoHS: Compliant Min Qty: 1 Package Multiple: 1200 6400
  • 1 $0.2450
  • 10,800 $0.1120
  • 15,600 $0.0987
$0.0987 / $0.2450 Buy Now
Chip 1 Exchange INSTOCK 6000
RFQ

Part Details for 1N5402-G

1N5402-G CAD Models

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1N5402-G Part Data Attributes

Parametric Data
1N5402-G Comchip Technology Corporation Ltd
Buy Now Datasheet
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1N5402-G Comchip Technology Corporation Ltd Rectifier Diode, 1 Element, 3A, 200V V(RRM),
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Comchip Technology
Application GENERAL PURPOSE
Breakdown Voltage-Min 200 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V
JEDEC-95 Code DO-27
JESD-30 Code O-PALF-W2
Non-rep Pk Forward Current-Max 150 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 3 A
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 200 V
Reverse Current-Max 10 µA
Reverse Test Voltage 200 V
Surface Mount NO
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 10

Alternate Parts for 1N5402-G

This table gives cross-reference parts and alternative options found for 1N5402-G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5402-G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
1N5402 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-27, PLASTIC PACKAGE-2 Uniohm Corp 1N5402-G vs 1N5402
1N5402X0 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2 Taiwan Semiconductor 1N5402-G vs 1N5402X0
1N5402-BC01-BP Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN Micro Commercial Components 1N5402-G vs 1N5402-BC01-BP
1N5402BK Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Central Semiconductor Corp 1N5402-G vs 1N5402BK
1N5402/90-E3 DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode Vishay Semiconductors 1N5402-G vs 1N5402/90-E3
1N5402-E3/93 DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode Vishay Semiconductors 1N5402-G vs 1N5402-E3/93
1N5402AMP Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, PLASTIC PACKAGE-2 Fagor Electrónica 1N5402-G vs 1N5402AMP
1N5402-GT3 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 Sangdest Microelectronics (Nanjing) Co Ltd 1N5402-G vs 1N5402-GT3
1N5402-BC02-BP Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN Micro Commercial Components 1N5402-G vs 1N5402-BC02-BP
1N5402-TB-LF Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2 Won-Top Electronics Co Ltd 1N5402-G vs 1N5402-TB-LF
Part Number Description Manufacturer Compare
FR303M22 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Rectron Semiconductor 1N5402-G vs FR303M22
HER303 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD International Semiconductor Inc 1N5402-G vs HER303
1N5402B0G Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, GREEN, PLASTIC PACKAGE-2 Taiwan Semiconductor 1N5402-G vs 1N5402B0G
1N5402TRLEADFREE Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Central Semiconductor Corp 1N5402-G vs 1N5402TRLEADFREE
FR303U21 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Rectron Semiconductor 1N5402-G vs FR303U21
1N5402H35 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Rectron Semiconductor 1N5402-G vs 1N5402H35
1N5402GP-TP Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2 Micro Commercial Components 1N5402-G vs 1N5402GP-TP
1N5402U21 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Rectron Semiconductor 1N5402-G vs 1N5402U21
HER303H31 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Rectron Semiconductor 1N5402-G vs HER303H31
1N5402M28 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Rectron Semiconductor 1N5402-G vs 1N5402M28

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