Part Details for 1N5402G by Taiwan Semiconductor
Overview of 1N5402G by Taiwan Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 1N5402G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1801-1N5402GTR-ND
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DigiKey | DIODE GEN PURP 200V 3A DO201AD Min Qty: 3750 Lead time: 6 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.0770 / $0.0974 | Buy Now |
DISTI #
1N5402G
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Avnet Americas | 3A, 200V, STANDARD RECOVERY RECTIFIER - Tape and Reel (Alt: 1N5402G) RoHS: Compliant Min Qty: 3750 Package Multiple: 1250 Container: Reel | 0 |
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$0.0813 / $0.0887 | Buy Now |
DISTI #
821-1N5402G
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Mouser Electronics | Rectifiers 3A, 200V, Standard Recovery Rectifier RoHS: Compliant | 0 |
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$0.0770 / $0.4100 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3750 Package Multiple: 1250 | 0 |
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$0.0948 | Buy Now |
DISTI #
1N5402G
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Avnet Americas | 3A, 200V, STANDARD RECOVERY RECTIFIER - Tape and Reel (Alt: 1N5402G) RoHS: Compliant Min Qty: 3750 Package Multiple: 1250 Container: Reel | 0 |
|
$0.0813 / $0.0887 | Buy Now |
DISTI #
1N5402G
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Avnet Americas | 3A, 200V, STANDARD RECOVERY RECTIFIER - Tape and Reel (Alt: 1N5402G) RoHS: Compliant Min Qty: 3750 Package Multiple: 1250 Container: Reel | 0 |
|
$0.0813 / $0.0887 | Buy Now |
Part Details for 1N5402G
1N5402G CAD Models
1N5402G Part Data Attributes
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1N5402G
Taiwan Semiconductor
Buy Now
Datasheet
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Compare Parts:
1N5402G
Taiwan Semiconductor
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, GREEN, PLASTIC PACKAGE-2
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Samacsys Manufacturer | Taiwan Semiconductor | |
Additional Feature | HIGH RELIABILITY, LOW POWER LOSS | |
Application | EFFICIENCY | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1 V | |
JEDEC-95 Code | DO-201AD | |
JESD-30 Code | O-PALF-W2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Non-rep Pk Forward Current-Max | 125 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Output Current-Max | 3 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Qualification Status | Not Qualified | |
Rep Pk Reverse Voltage-Max | 200 V | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | WIRE | |
Terminal Position | AXIAL |
Alternate Parts for 1N5402G
This table gives cross-reference parts and alternative options found for 1N5402G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5402G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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1N5402GHX0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5402G vs 1N5402GHX0G |
1N5402GB0 | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5402G vs 1N5402GB0 |
1N5402GHA0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5402G vs 1N5402GHA0G |
1N5402GR0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5402G vs 1N5402GR0G |
1N5402G | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD | Vishay Intertechnologies | 1N5402G vs 1N5402G |
1N5402G-KA0G | Rectifier Diode, | Taiwan Semiconductor | 1N5402G vs 1N5402G-KA0G |
1N5402G | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-27, | HY Electronic Corp | 1N5402G vs 1N5402G |
1N5402G-KR0G | Rectifier Diode, | Taiwan Semiconductor | 1N5402G vs 1N5402G-KR0G |
1N5402GX0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5402G vs 1N5402GX0G |
1N5402G-KB0G | Rectifier Diode, | Taiwan Semiconductor | 1N5402G vs 1N5402G-KB0G |