Datasheets
1N5402G by:

Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, GREEN, PLASTIC PACKAGE-2

Part Details for 1N5402G by Taiwan Semiconductor

Overview of 1N5402G by Taiwan Semiconductor

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for 1N5402G

Part # Distributor Description Stock Price Buy
DISTI # 1801-1N5402GTR-ND
DigiKey DIODE GEN PURP 200V 3A DO201AD Min Qty: 3750 Lead time: 6 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 3,750 $0.0974
  • 6,250 $0.0933
  • 12,500 $0.0840
  • 31,250 $0.0828
  • 62,500 $0.0778
  • 125,000 $0.0770
$0.0770 / $0.0974 Buy Now
DISTI # 1N5402G
Avnet Americas 3A, 200V, STANDARD RECOVERY RECTIFIER - Tape and Reel (Alt: 1N5402G) RoHS: Compliant Min Qty: 3750 Package Multiple: 1250 Container: Reel 0
  • 3,750 $0.0887
  • 6,250 $0.0862
  • 10,000 $0.0850
  • 18,750 $0.0838
  • 37,500 $0.0813
$0.0813 / $0.0887 Buy Now
DISTI # 821-1N5402G
Mouser Electronics Rectifiers 3A, 200V, Standard Recovery Rectifier RoHS: Compliant 0
  • 1 $0.4100
  • 10 $0.3360
  • 100 $0.2180
  • 500 $0.1730
  • 1,250 $0.1410
  • 2,500 $0.0930
  • 10,000 $0.0830
  • 25,000 $0.0820
  • 50,000 $0.0770
$0.0770 / $0.4100 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3750 Package Multiple: 1250 0
  • 3,750 $0.0948
$0.0948 Buy Now
DISTI # 1N5402G
Avnet Americas 3A, 200V, STANDARD RECOVERY RECTIFIER - Tape and Reel (Alt: 1N5402G) RoHS: Compliant Min Qty: 3750 Package Multiple: 1250 Container: Reel 0
  • 3,750 $0.0887
  • 6,250 $0.0862
  • 10,000 $0.0850
  • 18,750 $0.0838
  • 37,500 $0.0813
$0.0813 / $0.0887 Buy Now
DISTI # 1N5402G
Avnet Americas 3A, 200V, STANDARD RECOVERY RECTIFIER - Tape and Reel (Alt: 1N5402G) RoHS: Compliant Min Qty: 3750 Package Multiple: 1250 Container: Reel 0
  • 3,750 $0.0887
  • 6,250 $0.0862
  • 10,000 $0.0850
  • 18,750 $0.0838
  • 37,500 $0.0813
$0.0813 / $0.0887 Buy Now

Part Details for 1N5402G

1N5402G CAD Models

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1N5402G Part Data Attributes

1N5402G Taiwan Semiconductor
Buy Now Datasheet
Compare Parts:
1N5402G Taiwan Semiconductor Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, GREEN, PLASTIC PACKAGE-2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
Application EFFICIENCY
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JEDEC-95 Code DO-201AD
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 125 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 3 A
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 200 V
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form WIRE
Terminal Position AXIAL

Alternate Parts for 1N5402G

This table gives cross-reference parts and alternative options found for 1N5402G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5402G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
1N5402GHX0G Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5402G vs 1N5402GHX0G
1N5402GB0 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5402G vs 1N5402GB0
1N5402GHA0G Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5402G vs 1N5402GHA0G
1N5402GR0G Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5402G vs 1N5402GR0G
1N5402G Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD Vishay Intertechnologies 1N5402G vs 1N5402G
1N5402G-KA0G Rectifier Diode, Taiwan Semiconductor 1N5402G vs 1N5402G-KA0G
1N5402G Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-27, HY Electronic Corp 1N5402G vs 1N5402G
1N5402G-KR0G Rectifier Diode, Taiwan Semiconductor 1N5402G vs 1N5402G-KR0G
1N5402GX0G Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5402G vs 1N5402GX0G
1N5402G-KB0G Rectifier Diode, Taiwan Semiconductor 1N5402G vs 1N5402G-KB0G
Part Number Description Manufacturer Compare
HER303GHR0 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5402G vs HER303GHR0
GP30D/65 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 Vishay Semiconductors 1N5402G vs GP30D/65
FR303G Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, GREEN, PLASTIC PACKAGE-2 Taiwan Semiconductor 1N5402G vs FR303G
1N5402GHB0 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5402G vs 1N5402GHB0
GP30D-AP Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD Micro Commercial Components 1N5402G vs GP30D-AP
SF34GB0G Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5402G vs SF34GB0G
SF34A0G Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5402G vs SF34A0G
RGP30D Rectifier Diode, Galaxy Semi-Conductor Co Ltd 1N5402G vs RGP30D
EGP31D-E3/D Rectifier Diode, Vishay Intertechnologies 1N5402G vs EGP31D-E3/D
1N5402G-B Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2 Diodes Incorporated 1N5402G vs 1N5402G-B

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