Part Details for 1N5402GHB0G by Taiwan Semiconductor
Overview of 1N5402GHB0G by Taiwan Semiconductor
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Price & Stock for 1N5402GHB0G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1N5402GHB0G-ND
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DigiKey | DIODE GEN PURP 200V 3A DO201AD Lead time: 12 Weeks Container: Bulk | Temporarily Out of Stock |
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Part Details for 1N5402GHB0G
1N5402GHB0G CAD Models
1N5402GHB0G Part Data Attributes
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1N5402GHB0G
Taiwan Semiconductor
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Datasheet
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1N5402GHB0G
Taiwan Semiconductor
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Additional Feature | HIGH RELIABILITY, LOW POWER LOSS | |
| Application | EFFICIENCY | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 1 V | |
| JEDEC-95 Code | DO-201AD | |
| JESD-30 Code | O-PALF-W2 | |
| JESD-609 Code | e3 | |
| Non-rep Pk Forward Current-Max | 125 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Output Current-Max | 3 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reference Standard | AEC-Q101 | |
| Rep Pk Reverse Voltage-Max | 200 V | |
| Reverse Current-Max | 5 µA | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 |
Alternate Parts for 1N5402GHB0G
This table gives cross-reference parts and alternative options found for 1N5402GHB0G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5402GHB0G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 1N5402GHX0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5402GHB0G vs 1N5402GHX0G |
| 1N5402GB0 | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5402GHB0G vs 1N5402GB0 |
| 1N5402GHA0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5402GHB0G vs 1N5402GHA0G |
| 1N5402GR0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5402GHB0G vs 1N5402GR0G |
| 1N5402G | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD | Vishay Intertechnologies | 1N5402GHB0G vs 1N5402G |
| 1N5402G-KA0G | Rectifier Diode, | Taiwan Semiconductor | 1N5402GHB0G vs 1N5402G-KA0G |
| 1N5402G | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-27, | HY Electronic Corp | 1N5402GHB0G vs 1N5402G |
| 1N5402G-KR0G | Rectifier Diode, | Taiwan Semiconductor | 1N5402GHB0G vs 1N5402G-KR0G |
| 1N5402GX0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5402GHB0G vs 1N5402GX0G |
| 1N5402G-KB0G | Rectifier Diode, | Taiwan Semiconductor | 1N5402GHB0G vs 1N5402G-KB0G |