Part Details for 1N5712 by Galaxy Microelectronics
Overview of 1N5712 by Galaxy Microelectronics
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Applications
Audio and Video Systems
Aerospace and Defense
Entertainment and Gaming
Part Details for 1N5712
1N5712 CAD Models
1N5712 Part Data Attributes
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1N5712
Galaxy Microelectronics
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Datasheet
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1N5712
Galaxy Microelectronics
Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 20V; IAV Max (A): 0.035A; VFM Max (V): 1V; @ IF (A): 0.035A; IFSM Max (A): —A; IR Max (uA): 0.1uA; @VR (V): 15V; Package: DO-35
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
Part Package Code | DO-35 | |
Package Description | GLASS PACKAGE-2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.70 | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 0.41 V | |
JEDEC-95 Code | DO-35 | |
JESD-30 Code | O-LALF-W2 | |
Non-rep Pk Forward Current-Max | 0.035 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Output Current-Max | 0.035 A | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Peak Reflow Temperature (Cel) | 260 | |
Power Dissipation-Max | 0.43 W | |
Rep Pk Reverse Voltage-Max | 20 V | |
Surface Mount | NO | |
Technology | SCHOTTKY | |
Terminal Form | WIRE | |
Terminal Position | AXIAL |