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Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5A, 2 PIN
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1N5806USE3
Microsemi Corporation
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1N5806USE3
Microsemi Corporation
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5A, 2 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Package Description | HERMETIC SEALED, GLASS, D-5A, 2 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Samacsys Manufacturer | Microsemi Corporation | |
Additional Feature | HIGH RELIABLITY | |
Application | ULTRA FAST RECOVERY | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 0.875 V | |
JESD-30 Code | O-LELF-R2 | |
JESD-609 Code | e3 | |
Non-rep Pk Forward Current-Max | 35 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -65 °C | |
Output Current-Max | 1 A | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Rep Pk Reverse Voltage-Max | 150 V | |
Reverse Recovery Time-Max | 0.025 µs | |
Surface Mount | YES | |
Technology | AVALANCHE | |
Terminal Finish | MATTE TIN | |
Terminal Form | WRAP AROUND | |
Terminal Position | END |
This table gives cross-reference parts and alternative options found for 1N5806USE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5806USE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
JAN1N5806US | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2 | Sensitron Semiconductors | 1N5806USE3 vs JAN1N5806US |
JANTXV1N5806US | Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, | VPT Components | 1N5806USE3 vs JANTXV1N5806US |
1N5806U | Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, | Sensitron Semiconductors | 1N5806USE3 vs 1N5806U |
JAN1N5806US | Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, | VPT Components | 1N5806USE3 vs JAN1N5806US |
JAN1N5806US | Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, | Microsemi Corporation | 1N5806USE3 vs JAN1N5806US |
JANS1N5806US | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, | Bkc Semiconductors Inc | 1N5806USE3 vs JANS1N5806US |
JANS1N5806US | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 | Semtech Corporation | 1N5806USE3 vs JANS1N5806US |
JANS1N5806US | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2 | Sensitron Semiconductors | 1N5806USE3 vs JANS1N5806US |
JAN1N5806US | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, | Bkc Semiconductors Inc | 1N5806USE3 vs JAN1N5806US |
JANTX1N5806US | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, | Micross Components | 1N5806USE3 vs JANTX1N5806US |