Part Details for 1N5820G by Taiwan Semiconductor
Overview of 1N5820G by Taiwan Semiconductor
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Part Details for 1N5820G
1N5820G CAD Models
1N5820G Part Data Attributes
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1N5820G
Taiwan Semiconductor
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Datasheet
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1N5820G
Taiwan Semiconductor
Rectifier Diode,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Additional Feature | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | |
Application | EFFICIENCY | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 0.85 V | |
JEDEC-95 Code | DO-201AD | |
JESD-30 Code | O-PALF-W2 | |
JESD-609 Code | e3 | |
Non-rep Pk Forward Current-Max | 70 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 125 °C | |
Operating Temperature-Min | -65 °C | |
Output Current-Max | 3 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Peak Reflow Temperature (Cel) | 260 | |
Rep Pk Reverse Voltage-Max | 20 V | |
Reverse Current-Max | 500 µA | |
Reverse Test Voltage | 20 V | |
Surface Mount | NO | |
Technology | SCHOTTKY | |
Terminal Finish | TIN | |
Terminal Form | WIRE | |
Terminal Position | AXIAL | |
Time@Peak Reflow Temperature-Max (s) | 10 |